Stratified photodiode for high resolution CMOS image sensor...

Details Stratified photodiode for high resolution CMOS image sensor... Stratified photodiode for high resolution CMOS image sensor...

2006-05-18

2009-12-15

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S292000, C257SE27134

Reexamination Certificate

active

07633134

ABSTRACT:
A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.

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