Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-12-05
1998-01-27
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257756, 257377, 257393, 257903, 257774, H01L 2348, H01L 2352, H01L 2940
Patent
active
057125082
ABSTRACT:
A triple-poly process forms a static random access memory (SRAM) which has a compact four-transistor SRAM cell layout. The cell layout divides structures among the three layers of polysilicon to reduce the area required for each cell. Additionally, a contact between a pull-up resistor formed in an upper polysilicon layer forms a "strapping" via which cross-couples a gate region and a drain region underlying the strapping via. Pull-up resistors extend across boundaries of cell areas to increase the length and resistance of the pull-up resistors.
REFERENCES:
patent: 5198683 (1993-03-01), Sivan
patent: 5212399 (1993-05-01), Manning
Lien Chuen-Der
Terrill Kyle W.
Arroyo T. M.
Integrated Device Technology Inc.
Saadat Mahshid D.
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