Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2009-03-03
2011-11-08
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
With measuring or testing
C324S244000, C365S171000, C257SE21521
Reexamination Certificate
active
08053255
ABSTRACT:
Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
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Gao Kaizhong
Heinonen Olle
Xi Haiwen
Zhu Wenzhong
Blum David S
Campbell Nelson Whipps LLC
Seagate Technology LLC
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