Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-05-10
1993-01-19
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
372 45, 372 46, 372 47, 385 8, 257 21, 257 22, 257 14, H01L 3300
Patent
active
051810867
ABSTRACT:
A semiconductor structure for a light-interactive semiconductor device includes first and second crystalline semiconductor cladding layers having a first lattice constant and a strained superlattice structure disposed in contact with and between the first and second cladding layers and including alternating first crystalline semiconductor quantum barrier layers having a first and second crystalline semiconductor quantum well layers having a second energy band gap less than the first energy band gap and a third lattice constant wherein the first lattice constant is approximately equal to the average of the second and third lattice constants and the second lattice constant differs from the third lattice constant by at least 0.5 percent of the second lattice constant.
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Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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