Strained superlattice light emitting device

Coherent light generators – Particular active media – Semiconductor

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257 18, 257 21, H01S 319

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active

055219357

ABSTRACT:
There is provided a strained superlattice light emitting device for emitting light with a wavelength band around 0.8 .mu.m that is free from polarization dependency or can emit light either in the TE or TM mode with an output level much higher than that of an ordinary bulk layer, regardless of the density of injected current or carriers. Such a device comprises an InP substrate 1 and a pair of latticematched cladding layers 2 and 6 arranged on the substrate 1 and including first and second conductive type Al(Ga) InAs layers and an active layer 4 sandwiched by the pair of cladding layers 2 and 6 and having a strained superlattice structure, wherein the well layers 4a and 4b of the active layer 4 strained superlattice structure are respectively a GaInAsP layer showing an inplane tensile strain of 0.3 to 3% relative to the substrate and a GaInAsP layer showing an in-plane compressive strain of 0.3 to 3% relative to the substrate and the barrier layer 4b of the strained superlattice structure comprises an AlGaInAs layer.

REFERENCES:
patent: 5396508 (1995-03-01), Bour et al.
Okamoto, M. et al. "TM Mode Gain Enhancement in GaInAs-InP Lasers with Tensile Strained-layer Superlattice", IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, p.
Xu, C. et al, "Polarization-insensitive Travelling-wave Semi-conductor Optical Amplifier With A Square-shaped Active Waveguide", Optical Amplifiers and Their Applications, 1992 Technical Digest Series vol. 17, Jun. 24-26, 1992.

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