Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-02-01
2005-02-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S190000, C257S194000, C257S195000, C257S347000, C257S350000, C257S371000, C257S616000, C438S172000, C438S199000, C438S275000, C438S279000, C438S528000
Reexamination Certificate
active
06849883
ABSTRACT:
A MOSFET device including a semiconductor substrate, an SiGe layer provided on top of the semiconductor substrate, an Si layer provided on top of the SiGe layer; and a first isolation region for separating the Si layer into a first region and a second region, wherein the Si layer in the second region is turned into an Si epitaxial layer greater in thickness than the Si layer in the first region. The MOSFET device further includes at least one first MOSFET with the Si layer in the first region serving as a strained Si channel, and at least one second MOSFET with the Si epitaxial layer serving as an Si channel.
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Kern Rim et al., “Fabricating and Analysis of Deep Submicron Strained-Si N-MOSFET's”, IEEE Transactions on Electron Devices, vol. 47, No. 7, Jul. 2000, pp. 1406-1415.
T. Mizuno et al., “Electron and Hole Mobility Enhancement in Strained-Si MOSFET's on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology”, IEEE Electron Device Letters, vol. 21, No. 5 May 2000, pp. 230-232.
Huynh Andy
Nelms David
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
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