Strained silicon with elastic edge relaxation

Details Strained silicon with elastic edge relaxation Strained silicon with elastic edge relaxation

2008-03-04

2008-03-04

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S019000

Reexamination Certificate

active

07338834

ABSTRACT:
A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer, with the SiGe layer having a thickness less than its critical thicknesses. Shallow trenches are subsequently fabricated through the epitaxial layers, so that the strain energy is redistributed such that the compressive strain in the SiGe layer is partially relaxed elastically and a degree of tensile strain is induced to the neighboring layers of silicon. Because this process for inducing tensile strain in a silicon over-layer is elastic in nature, the desired strain may be achieved without formation of misfit dislocations.

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