Strained-silicon voltage controlled oscillator (VCO)

Details Strained-silicon voltage controlled oscillator (VCO) Strained-silicon voltage controlled oscillator (VCO)

2006-05-23

2006-05-23

Mis, David (Department: 2817)

Oscillators

Solid state active element oscillator

Transistors

C331S03600C, C331S1170FE, C331S175000, C331S17700V

Reexamination Certificate

active

07049898

ABSTRACT:
A strained-silicon voltage controlled oscillator (VCO) includes a first p-channel metal oxide semiconductor (PMOS) device having a strained-silicon layer coupled to a second PMOS device having a strained-silicon layer.

REFERENCES:
patent: 5672995 (1997-09-01), Hirase et al.
patent: 2003/0102498 (2003-06-01), Braithwaite et al.
patent: 2003/0127697 (2003-07-01), Ohta et al.
Hwang J R et al, “Performance of 70nm Strained-Silicon CMOS Devices”, 2003 Symposium on VLSI Technology. Digest of Technical Papers, (IEEE Cat No. 03CH37407), Jun. 10, 2003, pp. 103-104, XP002314312, Japan.
International Search Report, International App. No. PCT/US2004/032460, Applicant Ref. No. P16088PCT, Completion Date: Jan. 21, 2005, Date Mailed: Feb. 15, 2005.

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