Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
C257S288000, C257S365000, C257SE21125, C257SE21193
A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.
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Cohen Guy Moshe
Mooney Patricia May
Dougherty, Esq. Anne V.
Harrison Monica D
International Business Machines - Corporation
McGinn IP Law Group PLLC
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