Strained-silicon-on-insulator single-and double-gate MOSFET...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S288000, C257S365000, C257SE21125, C257SE21193

Reexamination Certificate

active

07812340

ABSTRACT:
A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.

REFERENCES:
patent: 4685198 (1987-08-01), Nomura et al.
patent: 4744863 (1988-05-01), Guckel et al.
patent: 5565690 (1996-10-01), Theodore et al.
patent: 6624478 (2003-09-01), Anderson et al.
patent: 6787423 (2004-09-01), Xiang
patent: 6867433 (2005-03-01), Yeo et al.
patent: 7074623 (2006-07-01), Lochtefeld et al.
patent: 2004/0104447 (2004-06-01), Lee et al.
patent: 1348210 (2002-05-01), None
patent: 2002-184962 (2002-06-01), None
patent: 530385 (2003-05-01), None
patent: WO 02/071495 (2002-09-01), None
Notification of Receipt of Demand By Competent International Preliminary Examining Authority dated Apr. 28, 2005, PCT/IPEA/402, PCT/IPEA/404.
Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration, dated Mar. 11, 2005, PCT/ISA/220, PCT/ISA/210, PCT/ISA/237.
Notification Concerning Transmittal of International Application as Published or Republished dated Apr. 21, 2005, PCT/IB/311, WO 2004/114383 cover page.
P.M. Mooney, “Strain relaxation and dislocations in SiGe/Si structures”,Materials Science&Engineering Reports, vol. R17 No. 3, Nov. 1, 1996, pp. 105-146.
Jean-Pierre Colinge,Silicon-On-Insulator-Technology: Materials to VLSI, 2nd Edition, Kluwer Academic Publishers, 1997, Chapter 1 pp. 1-5, Chapter 4 pp. 105-107.
G.M. Cohen, et al., “Free standing silicon as a compliant substrate for SiGe”, Material Research Society 2003 Spring Meeting, Apr. 21-25, 2003.
A.M. Jones, et al., “Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate”,Applied Physics Letters, vol. 74 No. 7, pp. 1000-1002, Feb. 15, 1999.
P.M. Solomon, et al., “Two Gates Are Better Than One-A planar self-aligned double-gate MOSFET technology to achieve the best on/off switching ratios as gate lengths shrink”,IEEE Circuits&Devices Magazine, vol. 19 No. 1, pp. 48-62, Jan. 2003.
Rim, et al., “Fabrication and Analysis of Deep Submicron Strained-Si N-MOSFET's”,IEEE Transactions On Electron Devices, vol. 47, No. 7, pp. 1406-1415, Jul. 2000.
H. Yin, et al., “Strain relaxation of SiGe islands on complaint oxide”,Journal of Applied Physics, vol. 91, No. 12, pp. 9716-9722, Jun. 15, 2002.
International Preliminary Report dated Sep. 14, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Strained-silicon-on-insulator single-and double-gate MOSFET... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Strained-silicon-on-insulator single-and double-gate MOSFET..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained-silicon-on-insulator single-and double-gate MOSFET... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4236151

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.