Strained-silicon for CMOS device using amorphous silicon...

Details Strained-silicon for CMOS device using amorphous silicon... Strained-silicon for CMOS device using amorphous silicon...

2003-06-04

2008-09-30

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C438S482000, C438S486000

Reexamination Certificate

active

07429749

ABSTRACT:
An integrated circuit (IC) includes a strained-silicon layer formed by deposition of amorphous silicon onto either a region of a semiconductor layer that has been implanted with ions to create a larger spacing between atoms in a crystalline lattice of the semiconductor layer or a silicon-ion layer that has been epitaxially grown on the semiconductor layer to have an increased spacing between atoms in the silicon-ion layer. Alternatively, the IC includes a strained-silicon layer formed by silicon epitaxial growth onto the region of the semiconductor layer that has been implanted with ions. The IC also preferably includes a CMOS device that preferably, but not necessarily, incorporates sub-0.1 micron technology. The implanted ions may preferably be heavy ions, such as germanium ions, antimony ions or others. Ion implantation may be done with a single implantation process, as well as with multiple implantation processes.

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