Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Reexamination Certificate
2007-07-30
2008-09-09
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
With current flow along specified crystal axis
C257S353000, C257S627000, C257SE27064, C438S199000, C438S198000
Reexamination Certificate
active
07423303
ABSTRACT:
The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating layer atop the substrate; and a semiconducting layer positioned atop and in direct contact with the insulating layer, the semiconducting layer comprising a first strained Si region and a second strained Si region; wherein the first strained Si region has a crystallographic orientation different from the second strained Si region and the first strained Si region has a crystallographic orientation the same or different from the second strained Si region. The strained level of the first strained Si region is different from that of the second strained Si region.
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Bedell Stephen W.
Chen Huajie
Doris Bruce B.
Mooney Patricia M.
Zhu Huilong
Budd Paul A
Jackson Jerome
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
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