Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-08-15
2006-08-15
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S190000, C257S191000
Reexamination Certificate
active
07091522
ABSTRACT:
A MOSFET structure utilizing strained silicon carbon alloy and fabrication method thereof. The MOSFET structure includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon carbon alloy channel layer, a gate dielectric layer, a polysilicon gate electrode (or metal gate electrode) and a source/drain region.
REFERENCES:
patent: 6358806 (2002-03-01), Puchner
patent: 2002/0100942 (2002-08-01), Fitzgerald et al.
patent: 2002/0125471 (2002-09-01), Fitzgerald et al.
patent: 2003/0057416 (2003-03-01), Currie et al.
patent: 2005/0054150 (2005-03-01), Mirabedini et al.
Chang Shu Tong
Lee Min-Hung
Liu Chee-Wee
Lu Shing Chii
Birch, Stewart, Kolasch and Birch LLP
Crane Sara
Industrial Research Technology Institute
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