Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-09-12
2010-12-14
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S479000, C438S517000, C438S149000, C257SE27147
Reexamination Certificate
active
07851325
ABSTRACT:
The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial stressor layer formed above the active semiconductor layer. As an example, the substrate may be silicon, the buried stressor layer may be silicon germanium, the active semiconductor layer may be silicon and the sacrificial stressor layer may be silicon germanium. Elastic edge relaxation is preferably used to efficiently transfer strain to the active layer.
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Clifton Paul A.
Connelly Daniel J.
Gaines R. Stockton
Acorn Technologies, Inc.
Nguyen Thanh
Orrick Herrington & Sutcliffe LLP
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