Strained quantum well type semiconductor laser device

Details Strained quantum well type semiconductor laser device Strained quantum well type semiconductor laser device

1992-11-18

1994-11-08

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

053633920

ABSTRACT:
A strained quantum well type semiconductor laser device is disclosed to comprise a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized in that tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively.

REFERENCES:
patent: 5040186 (1991-08-01), Logan et al.
patent: 5117469 (1992-05-01), Cheung et al.
patent: 5136602 (1992-08-01), Sugawara
patent: 5155737 (1992-10-01), Ikeda et al.
patent: 5251224 (1993-10-01), Irikawa et al.
patent: 5251225 (1993-10-01), Eglash et al.

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