Strained quantum well type semiconductor laser device

Details Strained quantum well type semiconductor laser device Strained quantum well type semiconductor laser device

1993-12-13

1995-02-14

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 318

Patent

active

053902084

ABSTRACT:
There is provided a strained quantum well layer semiconductor laser device that shows an improved temperature dependency of the threshold current and a high frequency performance while maintaining an excellent low threshold current operability. A strained quantum well layer type semiconductor laser device according to the invention comprises a light emitting active layer 14 of a multilayer structure including a quantum well layer 14a and a barrier layer 14c and a pair of light confining layers 13, 15, respectively laid on and under the active layer, the quantum well layer being made of InAs.sub.y P.sub.1-y (0<y.ltoreq.1), the barrier layer and/or the light confining layers being made of In.sub.1-x Ga.sub.x P (0<x.ltoreq.1). Such a device shows an improved temperature dependency of the threshold current and a high frequency performance, while maintaining an excellent low threshold current operability because of the structural features of its active layer.

REFERENCES:
patent: 5040186 (1991-08-01), Logan et al.
patent: 5079601 (1992-01-01), Isaki et al.
patent: 5155738 (1992-10-01), Ijichi et al.
Appl. Physics Lett., vol. 61, No. 21, Nov. 23, 1992, pp. 2506-2508 Y Imajo et al., "1.3.mu.m In As.sub.y P.sub.1-y /InP strained layer . . . ".
Electronics Letters, vol. 28, No. 25, Dec. 3, 1992, pp. 2351-2352 Kasukawa et al, "Very low Threshold Current 1.3 .mu.m . . . ".

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