Strained quantum well semiconductor laser diode

Details Strained quantum well semiconductor laser diode Strained quantum well semiconductor laser diode

1993-04-13

1995-04-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

054105625

ABSTRACT:
A visible wavelength InGaP/InGaAlP semiconductor laser diode with a double hetero (DH) structure capable of shortening the wavelength having a compound semiconductor substrate of a first conductivity type; a compound semiconductor first clad layer of the first conductivity type formed over the substrate; an undoped compound semiconductor active layer formed over the first clad layer, the lattice constant of the active layer being different from the clad layer to tensile strain the active layer; a compound semiconductor second clad layer of a second conductivity type formed over the active layer, the lattice constant of the second clad layer is the same as that of the first clad layer; a compound semiconductor current confining layer of the first conductivity type formed over the second clad layer except for a central region such that current in the central region flows parallel to the growth direction; a compound semiconductor cap layer of the second conductivity type formed over the current confining layer; a first electrode formed over the central portion of the cap layer; and a second electrode formed on the lower surface of the substrate.

REFERENCES:
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5090790 (1992-02-01), Zucker
patent: 5212704 (1993-05-01), Chen et al.
patent: 5257276 (1993-10-01), Forouhar et al.

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