Strained quantum-well semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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Reexamination Certificate

active

07960755

ABSTRACT:
In a transistor in which the majority carriers are holes, at least one narrow bandgap region or layer is doped p-type or contains an excess of holes and is subject to compressive mechanical strain, whereby hole mobility may be significantly increased. In a p-channel quantum well FET, the quantum well InSb well p-type layer5(modulation or directly doped) lies between In1-xAlxSb layers4, 6where x is of a value sufficient to induce strain in layer5to an extent that light and heavy holes are separated by much more than kT. Transistors falling within the invention, including bipolar pnp devices, may be used with their more conventional electron majority carriers counterparts in complementary logic circuitry.

REFERENCES:
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5298441 (1994-03-01), Goronkin et al.
patent: 2003/0080332 (2003-05-01), Phillips
patent: 2005/0054172 (2005-03-01), Feng et al.
patent: 2005/0194613 (2005-09-01), Phillips
patent: 2006/0261888 (2006-11-01), Bakalski
patent: 0 241 988 (1987-10-01), None
patent: 1 187 218 (2002-03-01), None
patent: 3-88369 (1991-04-01), None
patent: 3-187269 (1991-08-01), None
patent: 6-53255 (1994-02-01), None
patent: 01/93337 (2001-12-01), None
patent: 03/081674 (2003-10-01), None
International Search Report of PCT/GB2004/004722, mailed Jan. 31, 2005.
GB Search Report of GB 0326993.3, dated Apr. 23, 2004.
Lott et al, “Strainedp-Channel InGaSb/AIGaSb Modulation-Doped Field-Effect Transistors”, Electronics Letters, vol. 28, No. 15, Jul. 16, 1992, pp. 1459-1460, XP000307703.
Patent Abstracts of Japan, JP 01 009656 A, vol. 13, No. 184, Jan. 12, 1989.
Cui et al., “Technology and First Electrical Characteristics of Complementary NPN and PNP InAIAs/InGaAs Heterojunction Bipolar Transistors”, Japanese Journal of Applied Physics, vol. 41, No. 28, Part 1, Feb. 2002, pp. 1124-1130, XP001192196.
Patent Abstracts of Japan, JP 63 051678 A, vol. 012, No. 268, Mar. 4, 1988.

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