Strained quantum well photovoltaic energy converter

Details Strained quantum well photovoltaic energy converter Strained quantum well photovoltaic energy converter

1995-12-06

1998-12-22

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136252, 136267, 257 21, 257 22, 257458, 257656, 438 93, H01L 3106, H01L 310304, H01L 3118

Patent

active

058513108

ABSTRACT:
An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output.
A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

REFERENCES:
patent: 5496415 (1996-03-01), Barnham
Freundlich, A., et al., "InP-Based Quantum Solar Cells Grown by Chemical Beam Epitaxy," IEEE, Dec. 1994, pp. 1886-1889.
Renaud, P., et al., "Modeling p-i (Multi Quantum Well) -n solar cells: A contribution for a near optimum design," IEEE, Dec. 1994, pp. 1787-1790.
Barnham, K., et al., "Quantum Well Solar Cells," Optolectronics -Devices & Technology, vol. 9, Iss. 4, pp. 483-498, Dec. 1994.
Araujo, G.L., et al "Efficiency of Multiple Quantum Well Solar Cells," 12th ECPVSC, Amsterdam, 1994.
Corkish, R., et al, "Recombination of Carriers in Quantum Well Solar Cells,"IEEE, 1993, pp. 675 -680.
Nelson, J., et al., "Steady State Carrier Escape from Single Quantum Wells," J. Qu. Electr., Nov. 1992,pp. 2-23 + figures.

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