Strained quantum well laser for high temperature operation

Details Strained quantum well laser for high temperature operation Strained quantum well laser for high temperature operation

1991-09-06

1993-02-23

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

051896796

ABSTRACT:
A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100.degree. C.

REFERENCES:
patent: 4961197 (1990-10-01), Tanaka et al.
Fukagai et al., "Current Density Dependence for Dark-Line Defect Growth Velocity in Strained InGaAs/AlGaAs Quantum Well Laser Diodes," Japanese Journal of Applied Physics, vol. 30, No. 3A, Mar. 1991, pp. 371-373.
Hess et al., "Temperature Dependence of Threshold Current for a Quantum-Well Heterostructure Laser," Solid-State Electronics, vol. 23, pp. 585-589, 1980.
Okayasu et al., "Stable Operation (Over 5000 h) of High-Power 0.98-.mu.m InGaAs-GaAs Strained Quantum Well Ridge Waveguide Lasers for Pumping Er.sup.3+ -Doped Fiber Amplifiers," IEEE Photonics Technology Letters, vol. 2, No. 10, Oct. 1990, pp. 689-691.
Temkin et al., "High Temperature Operation of Lattice Matched and Strained InGaAs-InP Quantum Well Lasers," IEEE Photonics Technology Letters, vol. 3, No. 2, Feb. 1991, pp. 100-102.
Thijs et al., "High Temperature Operation of =1.multidot..mu.m Tensile Strained Multiple Quantum Well SIPBH Lasers," Electronics Letters, May 9, 1991, vol. 27, No. 10, pp. 791-793.
Thijs et al., "High Quantum Efficiency, High Power, Modulation Doped GainAs Strained-Layer Quantum Well Laser Diodes Emitting as 1.multidot.5 .mu.m," Electronics Letters, Dec. 7, 1989, vol. 25, No. 25, pp. 1735-1737.
van der Ziel et al., "High-Temperature Operation (to 180.degree. C.) of 0.98 .mu.m Strained Single Quantum Well In.sub.0.2 Ga.sub.0.8 As/GaAs Lasers," Applied Physics Letters, vol. 58, No. 13, Apr. 1, 1991, pp. 1437-1439.
Waters et al., "Inhibited Dark-Line Defect Formation in Strained InGaAs/AlGaAs Quantum Well Lasers," IEEE Photonics Technology Letters, vol. 2, No. 8, Aug. 1990, pp. 531-533.
Waters et al., "The Influence of In on the Performance of (Al)GaAs Single Quantum Well Lasers,"SPIE-Laser Diode Technology and Applications, vol. 1043, 1989, pp. 310-317.
Yellen et al., "20 000 h InGaAs Quantum Well Lasers," Electronics Letters, Oct. 12, 1990, 2 pages.
Zhu et al., "Temperature Dependence of Optical Gain, Quantum Efficiency, and Threshold Current in GaAs/GaAlAs Graded-Index Separate-Confinement Heterostructure Single-Quantum-Well Lasers," Journal of Quantum Electronics, vol. 25, No. 9, Sep. 1989, pp. 2007-2012.
Zory et al., "Anomalous Temperature Dependence of Threshold for Thin Quantum Well AlGaAs Diode Lasers," Applied Physics Letters, vol. 49, No. 1, Jul. 7 1986, pp. 16-18.

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