Coherent light generators – Particular active media – Semiconductor
Patent
1992-04-03
1993-10-26
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 46, 257 18, H01S 319
Patent
active
052572765
ABSTRACT:
Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate
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Forouhar Siamak
Ksendzov Alexander
Lang Robert J.
Larsson Anders G.
Brunell Norman E.
California Institute of Technology
Epps Georgia Y.
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