Strained layer InGaAs quantum well semiconductor laser on GaAs s

Details Strained layer InGaAs quantum well semiconductor laser on GaAs s Strained layer InGaAs quantum well semiconductor laser on GaAs s

1995-03-24

1996-06-25

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257 18, H01S 318

Patent

active

055307132

ABSTRACT:
A semiconductor double heterostructure formed on a GaAs substrate having an off (100) plane slightly tilted toward a predetermined direction, the double heterostructure including an InGaAs quantum well active strained layer sandwiched between potential barrier layers and including an interface between the InGaAs quantum well active strained layer and an upper potential barrier layer grown on the active strained layer, wherein the interface has a periodical ridge-like bunching structure comprising quadrilateral waveform parts and triangular waveform parts, each of the quadrilateral waveform parts comprises a series of a bottom terrace of the just (100) plane, a reverse direction multiple step plane largely tilted from (100) direction toward the opposite direction to the predetermined direction, a top terrace of the just (100) plane and a forward direction multiple step plane largely tilted from (100) direction toward the predetermined direction, each of the triangular waveform parts comprises the just (100) plane terrace and the forward direction multiple step plane largely tilted from (100) direction toward the predetermined direction.

REFERENCES:
patent: 5198879 (1993-03-01), Oshima
patent: 5234848 (1993-08-01), Seabaugh
Y. Chen et al., "High-Power 980-nm AlGaAs/InGaAs Strained Quantum-Well Lasers Grown by OMVPE", IEEE Photonics Technology Letters, vol. 3, No. 5, pp. 406-408. May 1991.
A. Moore et al., "The performance and reliability of 800-880 nm InAlGaAs/AlGaAs and InGaAs/AlGaAs strained layer ridge waveguide lasers", Journal of Crystal Growth, 1992, vol. 124, pp. 703-708. (No month available).
L. Heath et al., "980 nm ridge waveguide laser reliability at 100 mW", Applied Physics Letters, Apr. 19, 1993, vol. 62, pp. 1869-1871.

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