Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-02-01
2005-02-01
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000, C257S349000, C438S157000, C438S283000, C438S285000, C438S286000
Reexamination Certificate
active
06849884
ABSTRACT:
A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side of the central portion of the silicon structure. A strain-producing layer could be between the first gate and the first side of the central portion of the silicon structure and a second gate is on a second side of the central portion of the silicon structure.
REFERENCES:
patent: 6475869 (2002-11-01), Yu
patent: 20030151077 (2003-08-01), Mathew et al.
patent: 20040031979 (2004-02-01), Lochtefeld et al.
patent: 20040061178 (2004-04-01), Lin et al.
patent: 20040145019 (2004-07-01), Dakshina-Murthy et al.
Clark William F.
Fried David M.
Lanzerotti Louis D.
Nowak Edward J.
Chadurjian, Esq. Mark F.
International Business Machines - Corporation
McGinn & Gibb PLLC
Thomas Toniae M.
Wilczewski Mary
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