Strain insensitive integrated circuit resistor pair

Details Strain insensitive integrated circuit resistor pair Strain insensitive integrated circuit resistor pair

1978-06-29

1980-12-02

Larkins, William D.

357 26, 357 60, 357 72, H01L 2704

Patent

active

042368324

ABSTRACT:
A semiconductor device includes first and second resistor regions having the same resistance and formed in a main surface of a silicon substrate to extend in a perpendicular direction. When the resistor regions have a p-conductivity type, said main surface is a {100} face, {511} face, {811} face or {911} face. When the resistor regions are of an n-conductivity type, said main surface is a {111} face.

REFERENCES:
patent: 3186217 (1965-06-01), Pfann
patent: 3266303 (1966-08-01), Pfann
patent: 3705993 (1972-12-01), Grigorovici et al.
patent: 3819431 (1974-06-01), Kurtz et al.
patent: 4025941 (1977-05-01), Kanda et al.

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