Patent
1978-06-29
1980-12-02
Larkins, William D.
357 26, 357 60, 357 72, H01L 2704
Patent
active
042368324
ABSTRACT:
A semiconductor device includes first and second resistor regions having the same resistance and formed in a main surface of a silicon substrate to extend in a perpendicular direction. When the resistor regions have a p-conductivity type, said main surface is a {100} face, {511} face, {811} face or {911} face. When the resistor regions are of an n-conductivity type, said main surface is a {111} face.
REFERENCES:
patent: 3186217 (1965-06-01), Pfann
patent: 3266303 (1966-08-01), Pfann
patent: 3705993 (1972-12-01), Grigorovici et al.
patent: 3819431 (1974-06-01), Kurtz et al.
patent: 4025941 (1977-05-01), Kanda et al.
Komatsu Shigeru
Suzuki Kouji
Takahashi Satoshi
Wakatsuki Masao
Larkins William D.
Tokyo Shibaura Denki Kabushiki Kaisha
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