Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-06-09
2009-12-08
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S254000, C257S417000, C257SE29193, C257S213000
Reexamination Certificate
active
07629603
ABSTRACT:
A method to form a strain-inducing semiconductor region comprising three or more species of charge-neutral lattice-forming atoms is described. In one embodiment, formation of a strain-inducing semiconductor region, comprising three or more species of charge-neutral lattice-forming atoms, laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate. Thus, a strained crystalline substrate may be provided. In another embodiment, a semiconductor region with a crystalline lattice of three or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate.
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Chui Chi On
Kavalieros Jack T.
Majhi Prashant
Tsai Wilman
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Lopez Fei Fei Yeung
Tran Minh-Loan T
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