Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-05-24
2005-05-24
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S015000, C257S021000
Reexamination Certificate
active
06897471
ABSTRACT:
This invention teaches two new families of Si-based Ge/SnxGe1-xheterodiode and multiple quantum well (MQW) photonic devices: (1) band-to-band photodetectors, lasers, emitters, amplifiers and modulators for the 1.5 to 12 μm wavelength range; (2) intersubband photodetectors, lasers, emitters and modulators for 12 to 100 μm operation. The bipolar band-to-band devices have applications within the 1.5-2.2, 3-5 and 8-to-12 μm bands. The unipolar intersubband group has longwave infrared and terahertz applications. All strained-layer devices are grown a relaxed SnySizGe1-y-zbuffer layer—a virtual substrate (VS) grown directly upon a silicon wafer by unique LT UHV-CVD. The VS provides a low-defect atomic template for subsequent heteroepitaxy and is an essential enabling technique for engineering tensile and compressive strain within the Ge/SnxGe1-xMQW by selecting the VS lattice parameter to be approx midway between the layer lattices.
REFERENCES:
patent: 4769341 (1988-09-01), Luryi
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Kouvetakis John
Menendez Jose
Soref Richard A.
Auton William G.
The United States of America as represented by the Secretary of
Wilson Allan R.
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