Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-08-16
2011-08-16
Roman, Angel (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S455000, C438S933000, C257SE21482, C257SE21211
Reexamination Certificate
active
07998835
ABSTRACT:
Methods (and semiconductor substrates produced therefrom) of fabricating (n−1) SDOI substrates using n wafers is described. A donor substrate (e.g., silicon) includes a buffer layer (e.g., SiGe) and a plurality of multi-layer stacks formed thereon having alternating stress (e.g., relaxed SiGe) and strain (e.g., silicon) layers. An insulator is disposed adjacent an outermost strained silicon layer. The outermost strained silicon layer and underlying relaxed SiGe layer is transferred to a handle substrate by conventional or known bonding and separation methods. The handle substrate is processed to remove the relaxed SiGe layer thereby producing an SDOI substrate for further use. The remaining donor substrate is processed to remove one or more layers to expose another strained silicon layer. Various processing steps are repeated to produce another SDOI substrate as well as a remaining donor substrate, and the steps may be repeated to produce n−1 SDOI substrates.
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Quek Elgin
Tan Chung Foong
Tan Shyue Seng
Teo Lee Wee
Globalfoundries Singapore Pte. Ltd.
McCutcheon Robert D.
Munck Carter, LLP
Roman Angel
LandOfFree
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