Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-09-18
2007-09-18
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S076000, C117S084000
Reexamination Certificate
active
10839593
ABSTRACT:
Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a first semiconductor material on the substrate and having a second in-plane unstrained lattice constant that is different from the first in-plane unstrained lattice constant and a variable mismatch layer comprising a second semiconductor material disposed between the substrate and the first layer. The variable mismatch layer is configured to reduce stress in the first layer to below a level of stress resulting from growth of the first layer directly on the substrate. The variable mismatch layer may be a layer having a strained in-plane lattice constant that substantially matches the unstrained lattice constant of the first layer.
REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5296395 (1994-03-01), Khan et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5838706 (1998-11-01), Edmond et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 5877519 (1999-03-01), Jewell
patent: 6046464 (2000-04-01), Schetzina
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6072189 (2000-06-01), Duggan
patent: 6121121 (2000-09-01), Koide
patent: 6165874 (2000-12-01), Powell et al.
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 6194241 (2001-02-01), Tsutsui et al.
patent: 6194742 (2001-02-01), Kern et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6429467 (2002-08-01), Ando
patent: 6515316 (2003-02-01), Wojtowicz
patent: 2001/0015446 (2001-08-01), Inoue et al.
patent: 2001/0020700 (2001-09-01), Inoue et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2002/0020341 (2002-02-01), Marchand
patent: 2002/0079502 (2002-06-01), Ishibashi et al.
patent: 2003/0081642 (2003-05-01), Hwang et al.
patent: 2003/0102482 (2003-06-01), Saxler
patent: 2003/0213950 (2003-11-01), Hwang
patent: WO 02/13245 (2002-02-01), None
patent: WO 0213245 (2002-02-01), None
patent: WO 02/48434 (2002-06-01), None
patent: WO 03/049193 (2003-06-01), None
patent: WO 2004015749 (2004-02-01), None
International Preliminary Examination Report (Form 409) mailed Mar. 12, 2004 in PCT/US03/10788 (International Patent Application having same claims as the instant case).
Bharatan et al. “Structural characterization of GaN and GaAsxN1−xgrown by electron cyclotron resonance-metalorganic molecular beam epitaxy,”J. Vac. Sci. Technol. Avol. 12, No. 4, Jul. 1994.
Kim et al. “Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahight vacuum chemical vapor deposition,”Applied Physics Letters, vol. 79, No. 17, Oct. 22, 2001.
Marchand et al., “Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors,”Journal of Applied Physicsvol. 89, No. 12, Jun. 15, 2001, pp. 7846-7851.
Molina et al. “Strain relief in linearly graded composition buffer layers: a design scheme to grow dislocation-free (<105cm-2) and unstrained epilayers,”Applied Physics Lettersvol. 65, No. 19, Nov. 7, 1994.
Tan et al. “N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD,”Solid State Electronics, vol. 45 (2001) pp. 1945-1949.
Cree Inc.
Dickey Thomas L.
Myers Bigel & Sibley Sajovec, PA
Pyles Robert S.
LandOfFree
Strain compensated semiconductor structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Strain compensated semiconductor structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strain compensated semiconductor structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3802334