Fishing – trapping – and vermin destroying
Patent
1994-04-25
1995-09-19
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437190, H01L 2144
Patent
active
054515432
ABSTRACT:
A method for making a vertical profile contact opening (18) uses an etch stop layer (14), interposed between a conductor layer (10) and a dielectric layer (16), to eliminate resputtering of the underlying conductor material which prevents tapering of the etched opening (18). This contact opening formation is accomplished using different etchant chemistries, etching one film selective to the other. The use of the etch stop material in conjunction with conventional interconnect structures allows multiple stacking of contact features or multilevel interconnects to be achieved independent of underlying topography without increasing overall contact/via resistance. The method allows the fabrication of an unlanded via structure (30) having substantially vertical sidewall profile.
REFERENCES:
patent: 4943539 (1990-07-01), Wilson et al.
patent: 4948459 (1990-08-01), Laarhoven et al.
patent: 4965226 (1990-10-01), Gootzen et al.
patent: 4966870 (1990-10-01), Barber et al.
patent: 5328553 (1994-07-01), Poon
patent: 5371047 (1992-10-01), Greco et al.
patent: 5385867 (1995-01-01), Ueda et al.
patent: 5399235 (1995-03-01), Mutsaers et al.
Chebi Robert P.
Hayden James D.
Woo Michael P.
Clark Minh-Hien N.
Gurley Lynne A.
Hearn Brian E.
Motorola Inc.
LandOfFree
Straight sidewall profile contact opening to underlying intercon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Straight sidewall profile contact opening to underlying intercon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Straight sidewall profile contact opening to underlying intercon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1827935