Storage unit of single-conductor non-volatile memory cell...

Details Storage unit of single-conductor non-volatile memory cell... Storage unit of single-conductor non-volatile memory cell...

2008-03-07

2009-12-29

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050

Reexamination Certificate

active

07639536

ABSTRACT:
A storage unit of a single-conductor non-volatile memory cell is described, which includes an isolation layer in a substrate, a storage transistor and an erasing transistor. The storage transistor includes a first well of a first conductivity type in the substrate beside the isolation layer, a floating gate crossing over the isolation layer and including a first segment over the first well, and two source/drain regions of a second conductivity type in the first well beside the first segment of the floating gate. The erasing transistor includes a second well of the first conductivity type located in the substrate and separated from the first well by the isolation layer, a second segment of the floating gate over the second well, and a well pickup region of the first conductivity type in the second well beside the second segment of the floating gate.

REFERENCES:
patent: 6191980 (2001-02-01), Kelley et al.
patent: 7085179 (2006-08-01), Park et al.
patent: 7193265 (2007-03-01), Peng et al.
patent: 2009/0154253 (2009-06-01), Shiba et al.

Affiliated with

Also associated with

Rating

Storage unit of single-conductor non-volatile memory cell... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Storage unit of single-conductor non-volatile memory cell..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage unit of single-conductor non-volatile memory cell... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4070559