Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-11-22
2005-11-22
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S459000, C438S588000
Reexamination Certificate
active
06967149
ABSTRACT:
Apparatus and method for making a multi-layered storage structure includes forming a device layer on a single-crystal wafer, cleaving the device layer from the wafer, repeating the forming and cleaving to provide a plurality of cleaved device layers, and bonding the cleaved device layers together to form the multi-layered storage structure.
REFERENCES:
patent: 5636441 (1997-06-01), Meyer et al.
patent: 5682188 (1997-10-01), Meyer et al.
patent: 5721169 (1998-02-01), Lee
patent: 5851902 (1998-12-01), Sakai
patent: 5950067 (1999-09-01), Maegawa et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 6093623 (2000-07-01), Forbes
patent: 6159825 (2000-12-01), Henley et al.
patent: 6180496 (2001-01-01), Farrens et al.
patent: 6214701 (2001-04-01), Matsushita et al.
patent: 6248649 (2001-06-01), Henley et al.
patent: 6315393 (2001-11-01), Van Nice et al.
patent: 6352909 (2002-03-01), Usenko
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6426264 (2002-07-01), Kawai
patent: 6563133 (2003-05-01), Tong
patent: 6600173 (2003-07-01), Tiwari
patent: 6627518 (2003-09-01), Inoue et al.
patent: 2002/0081823 (2002-06-01), Cheung et al.
patent: 2002/0119640 (2002-08-01), Gonzalez
patent: 2003/0013274 (2003-01-01), Noda
patent: 2004/0029357 (2004-02-01), Vyvoda et al.
Simonton, Robert, “SOI Wafer Technology for CMOS ICs”, 2002, Simonton Associates, pp. 1-11.
“Soitec Buys Selected Assets of Picogiga”, Apr. 1, 2003, www.compoundsemiconductor.net/articles
ews/7/4/1/1, pp. 1-2.
SiGen Research and Development Programs, www.sigen.com/research.htm, pp. 1-3.
Eldredge Kenneth James
Fricke Peter
Jackson Warren
Meyer Neal W.
Van Brocklin Andrew L.
Hewlett--Packard Development Company, L.P.
Thomas Toniae M.
Wilczewski Mary
LandOfFree
Storage structure with cleaved layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Storage structure with cleaved layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage structure with cleaved layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3500882