Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2007-04-03
2007-04-03
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S156000, C365S190000
Reexamination Certificate
active
11215655
ABSTRACT:
A storage device and a method in the storage element, where the storage element has a first data storage node and a second data storage node and where the first data storage node is coupled to a bit line via a first pass transistor and where the second data storage node is coupled to a complementary bit line via a second pass transistor, is provided. The method includes performing a clear operation on the first data storage node and the second data storage node by providing a clear signal to a first clear transistor coupled to the first data storage node and a second clear transistor coupled to the second data storage node.
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Kenkare Prashant U.
Ramaraju Ravindraraj
Elms Richard T.
Freescale Semiconductor Inc.
King Robert L.
Nguyen Hien N
Singh Ranjeev
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