Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-10-24
2006-10-24
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S595000, C257S596000, C257SE31029
Reexamination Certificate
active
07126152
ABSTRACT:
A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
REFERENCES:
patent: 2001/0013614 (2001-08-01), Joshi et al.
patent: 2001/0030340 (2001-10-01), Fujiwara
patent: 2002/0063337 (2002-05-01), Oizumi et al.
Aratani Katsuhisa
Ishida Minoru
Kouchiyama Akira
Tsushima Tomohito
Ngo Ngan V.
Sonnenschein Nath & Rosenthal LLP
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