Storage capacitor structure

Details Storage capacitor structure Storage capacitor structure

2005-05-03

2005-05-03

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S244000, C438S253000, C438S387000, C349S038000, C349S042000

Reexamination Certificate

active

06887730

ABSTRACT:
A storage capacitor structure comprising a first capacitor electrode on a substrate, a capacitor dielectric layer on the first capacitor electrode and a second capacitor electrode on the capacitor dielectric layer, a passivation layer on the second capacitor electrode and a pixel electrode layer on the passivation layer. The second capacitor electrode has an area smaller than the first capacitor electrode. The passivation layer has an opening that exposes a portion of the second capacitor electrode. The pixel electrode layer and the second capacitor electrode are electrically connected through the opening in the passivation layer.

REFERENCES:
patent: 6356318 (2002-03-01), Kawahata
patent: 6480244 (2002-11-01), Murade et al.
patent: 20020093016 (2002-07-01), Lim et al.

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