Storage arrangement comprising two complementary field-effect tr

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 23, 357 22, 357 46, 357 15, 307304, 307279, H01L 2702

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active

040400824

ABSTRACT:
A semiconductor storage arrangement employing a pair of field-effect transistors which are complementary to one another and connected in series, one of the transistors having the source area thereof connected to the gate area of the second transistor and the gate area of the first transistor being connected to the drain area of the second transistor, the drain area of the first transistor being connected to the source area of the second transistor, in which both transistors are disposed on a common semi-conductor substrate and one of the transistors is a junction field-effect transistor, the gate area of which simultaneously forms the source or drain area of the other transistor.

REFERENCES:
patent: 3461361 (1969-08-01), Delivoras
patent: 3514676 (1970-05-01), Fa
patent: 3767984 (1973-10-01), Shinoda
patent: 3846766 (1974-11-01), Nojima
patent: 3932884 (1976-01-01), Kitumara

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