Compositions – Compositions containing a single chemical reactant or plural... – Organic reactant
Patent
1988-01-25
1989-12-05
Willis, Prince E.
Compositions
Compositions containing a single chemical reactant or plural...
Organic reactant
252 95, 252142, 252DIG14, 25218628, 25218629, 423273, C11D 718
Patent
active
048851060
ABSTRACT:
A storable semiconductor cleaning solution consists essentially of sulphuric acid at a concentration of from 30% to 70% and hydrogen peroxide at a concentration of from 1% to 20% preferably also containing a pentavalent phosphorus sequestrant and tin ions. The solution is produced by diluting concentrated sulphuric acid, aging the diluted acid until it reaches a temperature below 30.degree. C. and introducing the hydrogen peroxide, preferably having a concentration of at least 70% by weight, into the aged acid and equilibrating the resulting solution. The cleaning solutions can be stored for an extended period at ambient temperature and can be used to clean semiconductors, and with suitable precautions aluminized semiconductors, at temperatures below 100.degree. C.
REFERENCES:
patent: 1958204 (1934-05-01), Reichert
patent: 2658818 (1953-11-01), Shanley et al.
patent: 2872293 (1959-02-01), Roth
patent: 3383174 (1968-05-01), Carnine et al.
patent: 3387939 (1968-06-01), Reilly et al.
patent: 3864271 (1975-02-01), Stalter
patent: 4070442 (1978-01-01), Watts
patent: 4320102 (1982-03-01), Dalton et al.
patent: 4442134 (1984-04-01), Kern
patent: 4770808 (1988-09-01), McDonogh
Hitchmough Geoffrey
Lapham David J.
Micro-Image Technology Limited
Willis Prince E.
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