Stopper for chemical mechanical planarization, method for...

Details Stopper for chemical mechanical planarization, method for... Stopper for chemical mechanical planarization, method for...

2007-03-13

2007-03-13

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000

Reexamination Certificate

active

10726592

ABSTRACT:
A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

REFERENCES:
patent: 5198298 (1993-03-01), Haskell et al.
patent: 5602060 (1997-02-01), Kobayashi et al.
patent: 5907008 (1999-05-01), Nakano et al.
patent: 6121146 (2000-09-01), Yoon et al.
patent: 6180976 (2001-01-01), Roy
patent: 6225238 (2001-05-01), Wu
patent: 6352931 (2002-03-01), Seta et al.
patent: 6489030 (2002-12-01), Wu et al.
patent: 6583048 (2003-06-01), Vincent et al.
patent: 6703519 (2004-03-01), Buvat et al.
patent: 6761975 (2004-07-01), Chen et al.
patent: 2001/0019037 (2001-09-01), Zakhidov et al.
patent: 2002/0059899 (2002-05-01), Seta et al.
patent: 2002/0142579 (2002-10-01), Vincent et al.
patent: 2004/0030170 (2004-02-01), Levassort et al.
patent: 7-90085 (1995-04-01), None
patent: 7-102069 (1995-04-01), None
patent: 9-143271 (1997-06-01), None
patent: 10-120689 (1998-05-01), None
patent: 10-204181 (1998-08-01), None
patent: 11-29579 (1999-02-01), None
patent: 11-158187 (1999-06-01), None
patent: WO 01/19899 (2001-03-01), None
patent: WO 01/46963 (2001-06-01), None

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