Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-05-03
2005-05-03
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C365S153000
Reexamination Certificate
active
06888155
ABSTRACT:
A method of forming resistance changing elements with improved operational characteristics for use in memory devices and the resulting structures are disclosed. A chalcogenide glass having the formula (Gex1Se1-x1)1-y1Agy1, wherein 18≦x1≦28, or the formula (Gex2Se1-x2)1-y2Agy2, wherein 39≦x2≦42, and wherein in both the silver is in a concentration which maintains the germanium selenide glass in the glass forming region is used in a memory cell. The glass may also have a glass transition temperature (Tg) near or higher than typical temperatures used for fabricating and packaging memory devices containing the memory cell.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Flynn Nathan J.
Mondt Johannes
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