Chemistry: physical processes – Physical processes
Patent
1991-07-25
1993-04-13
Langel, Wayne
Chemistry: physical processes
Physical processes
51307, 423409, 501 96, 501 97, 501 98, C01B 2106, C04B 3558
Patent
active
052019233
ABSTRACT:
The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.
A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X-ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.
REFERENCES:
patent: 3242006 (1966-03-01), Gerstenberg
patent: 4636480 (1987-01-01), Hillig
patent: 4655830 (1987-04-01), Akashi et al.
patent: 4863881 (1989-09-01), Ahrens et al.
O. Matsumoto et al., "Formation of cubic tautalum nitride by heating hexagonal tautalum nitride in a nitrogen-argon plasma jet," Journal of the Less-Common Metals, 60, No. 1 (Jul. 1978), 147-149.
Mashimo Tsutomu
Nishida Minoru
Yamasaki Hisashi
Yamaya Susumu
Langel Wayne
Toshiba Tungaloy Co., Ltd.
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