Stitching of AFM and channeling layers for in-stack biasing CPP

Details Stitching of AFM and channeling layers for in-stack biasing CPP Stitching of AFM and channeling layers for in-stack biasing CPP

2007-09-04

2007-09-04

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

10980482

ABSTRACT:
The series resistance of a CPP read head having in-stack biasing has been reduced by stitching the AFM layer through a high conductance layer. Both the AFM and high conductance layers have significantly larger cross-sectional areas than the high conductance layer of prior art structures so the contribution, to the total resistance of the device, from the AFM layer as well as from spreading resistance at the stack-lead interface, is significantly reduced. The high conductance layer provides sufficient ferromagnetic coupling to enable the AFM to stabilize the in-stack bias layer. A process to manufacture the device is also described.

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Co-pending U.S. Patent App. No. HTIRC-02-004, U.S. Appl. No. 10/406,119, filed Apr. 3, 2003, “Method of Increasing CPP GMR in a Spin Valve Structure”.

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