Stiction resistant release process

Details Stiction resistant release process Stiction resistant release process

2006-08-08

2006-08-08

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S110000, C438S115000

Reexamination Certificate

active

07087456

ABSTRACT:
A method of releasing a micro-electronic device formed over an insulator of a silicon-on-insulator (SOI) substrate. In one embodiment, the release method includes etching at least a portion of the insulator to separate the micro-electronic device from the SOI substrate, rinsing at least the micro-electronic device, exposing at least the micro-electronic device to a micro-sphere solution and removing the micro-electronic device from the SOI substrate. The release method may also include exposing the micro-electronic device to an etching plasma to substantially expunge the micro-sphere solution.

REFERENCES:
patent: 5750420 (1998-05-01), Bono et al.
patent: 6538296 (2003-03-01), Wan

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