STI forming method for improving STI step uniformity

Details STI forming method for improving STI step uniformity STI forming method for improving STI step uniformity

2006-07-04

2006-07-04

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

Reexamination Certificate

active

07071075

ABSTRACT:
Disclosed is a shallow trench isolation (STI) forming method for improving STI step uniformity. The method deposits an oxidation layer to a semiconductor structure formed with STIs. After a planarization material layer is formed on the oxidation, then CMP process is performed. By using the method of the present invention, the STI step uniformity can be raised.

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