Stepper system for ultra-high resolution photolithography...

Photocopying – Projection printing and copying cameras – Focus or magnification control

Reexamination Certificate

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C355S053000, C430S005000

Reexamination Certificate

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08054450

ABSTRACT:
A stepper system for ultra-high resolution nano-lithography employs a photolithographic mask which includes a layer of an electrically conductive optically opaque material in which periodic arrays of sub-wavelength apertures are formed. The plasmonic excitation in the photolithographic mask exposed to the light of the wavelength in the range of 197 nm-248 nm, produces high resolution far-field radiation patterns of sufficient intensity to expose a photoresist on a wafer. The stepper system demonstrates the resiliency to the mask defects and ability to imprint coherent clear features of nano dimensions (45 nm-500 nm) and various shapes on the wafers for integrated circuits design. The stepper system may be adjusted to image the plane of the highest plasmonic field exiting the mask.

REFERENCES:
patent: 2005/0024610 (2005-02-01), Nishi et al.
Srituravanich, et al. “Deep subwavelength nanolithography using localized surface plasmon modes of planar silver mask” J. Vac. Sci. Technol. B 23(6), Dec. 2005, p. 2636-2639.
T.W. Ebbesen et al., “Extraordinary optical transmission through sub-wavelength hole arrays”, Nature, vol. 391, Feb. 1998, pp. 667-669.

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