Stepped structure for a multi-rank, stacked polymer memory...

Details Stepped structure for a multi-rank, stacked polymer memory... Stepped structure for a multi-rank, stacked polymer memory...

2006-03-28

2006-03-28

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S396000

Reexamination Certificate

active

07018853

ABSTRACT:
The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures.

REFERENCES:
patent: 3623038 (1971-11-01), Franklin et al.
patent: 4538884 (1985-09-01), Masaki
patent: 4593456 (1986-06-01), Cheung
patent: 4873455 (1989-10-01), De Chambost et al.
patent: 4995705 (1991-02-01), Yoshinaga et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5438023 (1995-08-01), Argos et al.
patent: 5499206 (1996-03-01), Muto
patent: 5519566 (1996-05-01), Perino et al.
patent: 5578867 (1996-11-01), Argos et al.
patent: 5592643 (1997-01-01), Thomas
patent: 5777356 (1998-07-01), Dhote et al.
patent: 5838035 (1998-11-01), Ramesh
patent: 5843808 (1998-12-01), Karnezos
patent: 5864932 (1999-02-01), Evans et al.
patent: 5927206 (1999-07-01), Bacon et al.
patent: 5932965 (1999-08-01), Berggren et al.
patent: 5939775 (1999-08-01), Bucci et al.
patent: 6005707 (1999-12-01), Berggren et al.
patent: 6005791 (1999-12-01), Gudesen et al.
patent: 6052354 (2000-04-01), Gudesen et al.
patent: 6054331 (2000-04-01), Woo et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6064615 (2000-05-01), Gudesen
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6084850 (2000-07-01), Gudesen et al.
patent: 6088319 (2000-07-01), Gudesen
patent: 6115281 (2000-09-01), Aggarwal et al.
patent: 6141309 (2000-10-01), Saitou et al.
patent: 6171934 (2001-01-01), Joshi et al.
patent: 6194229 (2001-02-01), Basceri
patent: 6210979 (2001-04-01), Kweon et al.
patent: 6219160 (2001-04-01), Nordal et al.
patent: 6236587 (2001-05-01), Gudesen et al.
patent: 6265230 (2001-07-01), Aggarwal et al.
patent: 6269018 (2001-07-01), Monsma et al.
patent: 6314641 (2001-11-01), Akram
patent: 6323512 (2001-11-01), Noh et al.
patent: 6324069 (2001-11-01), Weber
patent: 6326936 (2001-12-01), Inganas et al.
patent: 6337032 (2002-01-01), Chivukula et al.
patent: 6376259 (2002-04-01), Chu et al.
patent: 6380553 (2002-04-01), Gudesen et al.
patent: 6380597 (2002-04-01), Gudesen et al.
patent: 6403396 (2002-06-01), Gudesen et al.
patent: 6420190 (2002-07-01), Shimoda et al.
patent: 6424553 (2002-07-01), Berggren et al.
patent: 6429457 (2002-08-01), Berggren et al.
patent: 6432739 (2002-08-01), Gudesen et al.
patent: 6466473 (2002-10-01), Nair et al.
patent: 6498744 (2002-12-01), Leistad et al.
patent: 6498746 (2002-12-01), Chow
patent: 6522568 (2003-02-01), Nair
patent: 6524887 (2003-02-01), Li et al.
patent: 6529398 (2003-03-01), Nair et al.
patent: 6541869 (2003-04-01), Gudesen et al.
patent: 6570440 (2003-05-01), Chow et al.
patent: 6587250 (2003-07-01), Armgarth et al.
patent: 6600185 (2003-07-01), Tani et al.
patent: 6606261 (2003-08-01), Gudesen et al.
patent: 6611448 (2003-08-01), Nair et al.
patent: 6624457 (2003-09-01), Li et al.
patent: 6642069 (2003-11-01), Armgarth et al.
patent: 6646903 (2003-11-01), Chow
patent: 6646904 (2003-11-01), Chow
patent: 6649503 (2003-11-01), Kim et al.
patent: 6656801 (2003-12-01), Corvasce et al.
patent: 6667655 (2003-12-01), Chow et al.
patent: 6670659 (2003-12-01), Leistad et al.
patent: 6683803 (2004-01-01), Gudesen et al.
patent: 6724511 (2004-04-01), Gudesen et al.
patent: 6730562 (2004-05-01), Engelhardt et al.
patent: 6734478 (2004-05-01), Johansson et al.
patent: 6756620 (2004-06-01), Isenberger et al.
patent: 6798003 (2004-09-01), Li et al.
patent: 6842357 (2005-01-01), Brown
patent: 6858862 (2005-02-01), Li et al.
patent: 2001/0040828 (2001-11-01), Berggren et al.
patent: 2002/0000005 (2002-01-01), Jermier
patent: 2002/0024835 (2002-02-01), Thomson et al.
patent: 2002/0044480 (2002-04-01), Gudesen et al.
patent: 2002/0060923 (2002-05-01), Thompson et al.
patent: 2002/0093845 (2002-07-01), Matsuoka et al.
patent: 2002/0126365 (2002-09-01), Armgarth et al.
patent: 2002/0134980 (2002-09-01), Armgarth et al.
patent: 2002/0158295 (2002-10-01), Armgarth et al.
patent: 2002/0160116 (2002-10-01), Nordal et al.
patent: 2002/0174289 (2002-11-01), Chow
patent: 2002/0191435 (2002-12-01), Nordal
patent: 2003/0017627 (2003-01-01), Li et al.
patent: 2003/0018148 (2003-01-01), Kaspar et al.
patent: 2003/0024731 (2003-02-01), Nordal et al.
patent: 2003/0063499 (2003-04-01), Gudesen et al.
patent: 2003/0085439 (2003-05-01), Gudesen et al.
patent: 2003/0099126 (2003-05-01), Gudesen
patent: 2003/0103386 (2003-06-01), Broms et al.
patent: 2003/0107067 (2003-06-01), Gudesen
patent: 2003/0107085 (2003-06-01), Gudesen et al.
patent: 2003/0120859 (2003-06-01), Chow
patent: 2003/0120964 (2003-06-01), Chow et al.
patent: 2003/0120965 (2003-06-01), Dahl
patent: 2003/0128601 (2003-07-01), Gudesen et al.
patent: 2003/0137865 (2003-07-01), Thompson et al.
patent: 2003/0151940 (2003-08-01), Gudesen et al.
patent: 2003/0154426 (2003-08-01), Chow et al.
patent: 2003/0179617 (2003-09-01), Gudesen et al.
patent: 2003/0188251 (2003-10-01), Brown et al.
patent: 2003/0218191 (2003-11-01), Nordal et al.
patent: 2003/0224535 (2003-12-01), Andideh et al.
patent: 2004/0004887 (2004-01-01), Gudesen et al.
patent: 2004/0032759 (2004-02-01), Chow et al.
patent: 2004/0042288 (2004-03-01), Chow
patent: 2004/0047212 (2004-03-01), Chow
patent: 2004/0071018 (2004-04-01), Nordal et al.
patent: 2004/0100828 (2004-05-01), Garney et al.
patent: 2004/0102054 (2004-05-01), Leeson et al.
patent: 2004/0150023 (2004-08-01), Li et al.
patent: 2004/0152231 (2004-08-01), Li et al.
patent: 2004/0214009 (2004-10-01), Andideh
patent: 2004/0217402 (2004-11-01), Andideh
patent: 363 293 729 (1988-11-01), None
IBM Technical Disclosure Bulletin, vol. 37 (11), pp. 421-424, 1994.
Borca, C., et al., “Influence of dynamical Scattering in Crystalline Poly (vinylidene fluoride-trifluoreothylene) Copolymers”, Applied Physics Letters, vol. 74, pp. 347-349, Jan. 18, 1999.
Borca, C., et al., “Lattice-Stiffening Transition in Copolymer films of Vinylidene Fluoride (70%) with Trifluoroethylene (30%)”, Physical Review Letters, pp. 4562-4565, Nov. 29, 1999.
Bune, A., et al., “Piezolelectric and Pyroelectric Properties of Ferroelectric Langmuir-Blodgett Polymer Films”, Journal of Applied Physics, vol. 85, pp. 7869-7873, Jun. 1, 1999.
Bune. A., et al., “Two-Dimensional Ferroelectric Films”, Nature, vol. 391, pp. 874-877, Feb. 26, 1998.
Choi, J., et al., “Phase Transition in The Surface Structure in Copolymer Films of Vinylidene Fluoride (70%) with Trifluoroethylene (30%)”, Physical Review B, vol. 61, pp. 5760-5770, Feb. 15, 2000.
Desu, S., “Minimization of Fatigue in Ferroelectric Films”, Phys. Stat. Sol. (a) 151, pp. 467-480, 1995.
Ducharme, S., et al., “Ultrathin Ferroelectric Polymer Films”, Ferroelectrics, vol. 202, pp. 29-37, 1997.
Lovinger, A.J., “Ferroelectric Polymers”, Science, vol. 220, pp. 1115-1121, Jun. 10, 1983.
Morikawa, E., et al., “Photoemission Study of Direct Photomicromachining in Poly (vinylidene fluoride)”, Journal of Applied Physics, vol. 87, pp. 4010-4016, Apr. 15, 2000.
Diana et al-U.S. Appl. No. 10/816,260—ION Implating Conductive Electrodes of Polymer Memories.
Andideh et al-U.S. Appl. No. 10/712,205— Parallel Electrode Memory.
Diana et al-U.S. Appl. No. 10/746,173—Polymer/Metal Interface with Multilayered Diffusion Barrier.
Coulson et al-U.S. Appl. No. 10/877,914—Temperature Adaptive Ferro-Electric Memory Access Parameters.
Steger et al-U.S. Appl. No. 10/822,423—Chemical-Mechanical. Post-Etch Removal of Photoresist in Polymer Memory Fabrication.

Affiliated with

Also associated with

Rating

Stepped structure for a multi-rank, stacked polymer memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stepped structure for a multi-rank, stacked polymer memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stepped structure for a multi-rank, stacked polymer memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3563015