Step shape tailoring by phase angle variation RF bias sputtering

Details Step shape tailoring by phase angle variation RF bias sputtering Step shape tailoring by phase angle variation RF bias sputtering

1983-10-11

1986-04-22

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192R, 204192D, 357 231, 357 24, 357 52, 357 54, 357 65, 357 68, C23C 1500

Patent

active

045840792

ABSTRACT:
Disclosed is a method for tailoring the shape of a dielectric layer covering a step in a semiconductor device. The method comprises placing a semiconductor device comprising the step into a low pressure ionization chamber comprising a target electrode and a substrate electrode; connecting a sample of the dielectric to the target electrode; placing the semiconductor device comprising the step onto the substrate electrode; powering the target electrode and the substrate electrode with a radio frequency power having an electrical phase angle between the substrate electrode and the target electrode; and adjusting the electrical phase angle to obtain the desired shape of the dielectric layer covering the step.

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patent: 3868723 (1975-02-01), Lechaton et al.
patent: 4131533 (1978-12-01), Bialko et al.
patent: 4284489 (1981-08-01), Weber
patent: 4428810 (1984-01-01), Webb et al.
J. S. Logan, "Control of RF Sputtered Film Properties Through Substrate Tuning", Mar., 1970, IBM J. Res. Develop., 172-175.
R. E. Jones, C. L. Standley, L. I. Maissel, "Re-Emission Coefficients of Si and SiO.sub.2 Films Deposited Through rf and dc Sputtering", Nov., 1967, J. Applied Physics, vol. 38, No. 12, 4656-4662.
Arshad Mumtaz, "RF Magnetron Sputtered Silicon Dioxide with RF Bias", Materials Research Corporation, JVST, pp. ST-V-1-ST-V-15, (1982).
C. Y. Ting, V. J. Vivalda, H. G. Schaefer, "Study of Planarized Sputter-Deposited SiO.sub.2 ", J. Vac. Sci. Technol., 15(3), May/Jun., 1978, 1105-1112.

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