Step attenuator

Wave transmission lines and networks – Attenuators

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333 81A, H01P 122

Patent

active

053472390

ABSTRACT:
An RF step attenuator topology is optimized for use with GaAsFET switching devices, exploiting their high isolation while minimizing the effects of their relatively high insertion loss. The attenuator includes an attenuation network that has two inputs and two outputs, permitting four different attenuation levels to be selected by use of just one input switch and one output switch. The detailed embodiments feature high levels of attenuation (up to 140 dB in 10 dB steps), a minimum number of switches in the through-path (four), very wide band operation (250 KHz-2 GHz), and economical design.

REFERENCES:
patent: 4556808 (1985-12-01), Coats
patent: 4654610 (1987-03-01), Dasilva
patent: 4810949 (1989-03-01), Schiemenz et al.
patent: 4912394 (1990-03-01), Sugimoto et al.
patent: 4952893 (1990-08-01), Cuddy
patent: 5119052 (1992-06-01), Witkowski et al.
patent: 5216355 (1993-06-01), Terada et al.
GaAs MMIC Products catalog, Apr., 1992, excerpts pp. 1-28, 29; 2-22; 23; 2-60, 61; 2-62, 63, 2-64, 65.
Fink, D. G., et al., editors, Electronic Engineers' Handbook, pp. 12-50-12-59, 1975.
Schematic diagram, "Schematic RF Input Section," Mar. 6, 1991.
Schematic diagram, "Schematic, PWA Solid State Attenuator/R.P.P. Assy.," Feb. 25, 1991, (2 sheets).

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