Stencil mask for photochemical reaction process and method of ma

Details Stencil mask for photochemical reaction process and method of ma Stencil mask for photochemical reaction process and method of ma

1994-10-21

1999-01-12

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

378 34, 378 35, G03F 700

Patent

active

058585761

ABSTRACT:
A stencil mask for use in a photochemical reaction process, comprising a mask substrate 1, an absorber film 3 which is formed on one surface of the mask substrate 1, has a window 2, and not only absorbs or reflect photons but is also self-supportive, and a pattern 5 depicted on the absorber film 3. The self-supportive function of the absorber film 3 dispenses with the presence of a film for supporting itself. This simplifies the structure of the stencil mask, and reduces the number of stencil mask manufacturing steps. The quality of the pattern 5 can be improved since the sides of the absorber film 3 carrying the pattern 5 are not covered by any film. The absorber film 3 is made of gold Au or tungsten W.
The pattern 5 is prepared on the basis of a pattern depicted on the resist film. A small dose of beams is used to depict the pattern according to FIB or scanning, which reduces the time necessary for pattern depiction. Further, the pattern depiction is performed by one exposure process in a short period of time. Thus, the stencil mask can be manufactured in a reduced period of time.

REFERENCES:
patent: 4080267 (1978-03-01), Castellani
patent: 5464711 (1995-11-01), Mogab
Semicon News, Oct. 1988, pp. 31-38. (English abstract in Supplemental IDS).
Hyomen Kagaku , vol. 5, No. 4, Masataka Hirose, Plasma & Photo-Excited Processes, 1984, pp. 435-444. (English abstract in Supplemental IDS).
Semiconductor World, Technical Report, Dec. 1989, pp. 110-113. (English abstract in Supplemental IDS).
American Vacuum Society, Atoda et al., Diffraction Effects on Pattern Replication with Synchrotron Radiation, Oct. -Dec. 1983, pp. 1267-1270.
Fujiwara, Nobuo, et al. "Cold and Low-Energy Ion Etching (Collie)", Proc. of 1989 Intern. Symp. On MicrolProcess Conference pp. 239-242.
Madouri, A., et al., "Non Hydrogenated Materials For X-Ray Masks (Si.sub.3 N.sub.4 And SiC)", Microelectronic Engineering 7 (1987) 241-245, North-Holland.
Visser, C.C.G., "A New Silicon Nitride Mask Technology For Synchrotron Radiation X-Ray Lithography: First Results", Microelectronic Enginnering 6 (1987) 299-304, North-Holland.
Ohki, Shigehisa, et al., "High-Precision X-Ray Mask Technology", NTT LSI Laboratories, pp. 68-72.

Affiliated with

Also associated with

Rating

Stencil mask for photochemical reaction process and method of ma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stencil mask for photochemical reaction process and method of ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stencil mask for photochemical reaction process and method of ma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1513388