Stencil mask for ion implantation

Details Stencil mask for ion implantation Stencil mask for ion implantation

2005-12-27

2005-12-27

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06979520

ABSTRACT:
There is disclosed a stencil mask for ion implantation used in an ion implantation process of semiconductor device fabrication comprising at least a base material portion and a stencil portion, wherein the stencil portion has a diamond layer. Thereby, there can be provided a stencil mask for ion implantation used in an ion implantation process of semiconductor device fabrication, which has high resistance to ion irradiation, and which can stably perform ion implantation of high precision and high purity for long time.

REFERENCES:
patent: 5728492 (1998-03-01), Kawata
patent: 100 39 644 (2002-02-01), None
patent: 0 473 332 (1992-03-01), None
T. Shibata, et al., “Stencil Mask Ion Implantation Technology for High Performance MOSFETs”, IEDM 2000 Proceedings, San Francisco CA (Dec. 11-13, 2000), pp. 869-871.

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