Status induction semiconductor device

Details Status induction semiconductor device Status induction semiconductor device

1993-09-15

1995-02-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257192, 257196, 257197, 257498, H01L 2980

Patent

active

053918975

ABSTRACT:
A static induction semiconductor device has a low-resistance drain region, a high-resistance layer disposed on the drain region, a low-resistance source region spaced from the high-resistance layer, a low-resistance gate region disposed in the high-resistance layer, and a hetero layer disposed in an interface between the high-resistance layer and the source region and an interface between the gate region and a surface protective layer on the gate and source regions. The hetero layer, which may be made of AlGaAs, has a band gap larger than a semiconductor crystal such as GaAs of the drain, source, and gate regions. The static induction semiconductor device has a low resistance turned on and can operate in a bipolar mode.

REFERENCES:
patent: 4484207 (1984-11-01), Nishizawa et al.
patent: 4608582 (1986-08-01), Nichizawa
patent: 4738935 (1988-04-01), Shimbo et al.
High Frequency Characteristics of GaAs Vertical JFET Devices Operated in the Bipolar Mode (G. Schweeger) Jan., 1992.

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