Static storage element and process for the production thereof

Details Static storage element and process for the production thereof Static storage element and process for the production thereof

1975-09-25

1977-05-31

Wojciechowicz, Edward J.

357 63, 357 88, 357 91, H01L 2978, H01L 29167, H01L 29207

Patent

active

040273202

ABSTRACT:
A static storage element in a field effect transistor arrangement, has source and drain zones in a semiconductor body and a gate insulation layer provided on the surface of the semiconductor body. A spatial region having a high lattice defect or trap density is formed in the gate insulation layer for storing a quantity of charge which can be altered by electromagnetic radiation.

REFERENCES:
patent: 3852120 (1974-12-01), Johnson et al.
patent: 3922708 (1975-11-01), Crowder et al.
IBM--Tech. Bul.--vol. 14, No. 4, Sept. 1971, pp. 1269-1270, Troutman.
IBM--Tech. Bul.--vol. 15, No. 10, Mar. 1973, p. 3031, Regh.

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