Static storage cell

Details Static storage cell Static storage cell

1984-08-02

1986-12-02

Edlow, Martin H.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 4, 357 6, 357 46, 357 237, 365177, 365182, 365188, H01L 2702, H01L 2980, H01L 4902, G11C 1134

Patent

active

046268871

ABSTRACT:
A static storage cell is formed of two cross-coupled inverters each containing a field effect transistor and a resistor element connected in series therewith. Each circuit node is thus connected via an additional logic element to a bit line allocated thereto. A storage cell is provided which is on as small as possible a semiconductor area and has a short access time. This is achieved by designing the additional logic elements as hot electron transistors which are respectively combined with one of the field effect transistors to form a common component which only requires the area of a field effect transistor. The cell is useful in VLSI semiconductor memories.

REFERENCES:
patent: 3751723 (1973-08-01), Shirn et al.
patent: 3986173 (1976-10-01), Baitinger
patent: 4090254 (1978-05-01), Ho et al.
patent: 4150392 (1979-04-01), Nonaka
patent: 4516146 (1985-05-01), Shannon et al.
"Elektronische Schaltkreise" by A. Moschwitzer and G. Jorke, VEB Verlag Technik, Berlin 1979, p. 141, FIG. 2.76c.
"Solid State Electronics", vol. 24, 1981, pp. 343-366, particularly FIG. 1.

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